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Si1401EDH
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 12
- 5.2
2.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.4
-1
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 0 V, V GS = ± 4.5 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 55 °C
V DS ?? - 5 V, V GS = - 10 V
V GS = - 4.5 V, I D = - 5.5 A
- 15
0.028
±5
±1
-1
- 10
0.034
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 4.8 A
V GS = - 1.8 V, I D = - 1.4 A
0.038
0.053
0.046
0.070
?
V GS = - 1.5 V, I D = - 0.9 A
0.072
0.110
Forward Transconductance a
g fs
V DS = - 6 V, I D = - 5.5 A
16
S
Dynamic b
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 6 V, V GS = - 8 V, I D = - 5.5 A
V DS = - 6 V, V GS = - 4.5 V, I D = - 5.5 A
24
14.1
1.9
36
22
nC
Gate-Drain Charge
Q gd
4
Gate Resistance
R g
f = 1 MHz
0.08
0.42
0.84
k ?
Turn-On Delay Time
t d(on)
160
240
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = - 6 V, R L = 1.4 ?
I D ? - 4.4 A, V GEN = - 4.5 V, R g = 1 ?
420
1325
630
1990
Fall Time
Turn-On Delay Time
t f
t d(on)
985
72
1480
110
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 6 V, R L = 1.4 ?
I D ? - 4.4 A, V GEN = - 8 V, R g = 1 ?
210
2100
1015
320
3150
1525
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
- 2.3
- 25
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 5.5 A, V GS = 0 V
I F = - 5.5 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.85
27
12
10
17
- 1.2
50
25
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
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